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SGR20N40L / SGU20N40L
August 2001
IGBT
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications
Features
* * * * * High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L
Application
Strobe flash.
C
C
G
G E
D-PAK
GC E
I-PAK
E
Absolute Maximum Ratings
Symbol VCES VGES ICM (1) PC TJ Tstg TL
TC = 25C unless otherwise noted
Description Collector - Emitter Voltage Gate - Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8" from case for 5 seconds
@ TC = 25C
SGR / SGU20N40L 400 6 150 45 -40 to +150 -40 to +150 300
Units V V A W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA (D-PAK) RJA (I-PAK) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Thermal Resistance, Junction-to-Ambient Typ. ---Max. 3.0 50 110 Units C/W C/W C/W
Notes : (2) Mounted on 1" square PCB (FR4 or G-10 Material)
(c)2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 ------10 0.1 V A A
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage C-E Saturation Current IC = 1mA, VCE = VGE IC = 150A, VGE = 4.5V 0.5 2.0 1.0 4.5 1.4 8.0 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V, VCE = 30V, f = 1MHz ---3800 50 35 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC = 300V, IC = 150A, VGE = 4.5V, RG = 15* Resistive Load ----0.2 1.7 0.3 1.5 --0.5 2.0 s s s s
* Notes : Recommendation of RG Value : RG15
(c)2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
200
Common Emitter T C = 25
7 5.0V 4.5V Common Emitter VGE = 4.5V 150A
Collector-Emitter Voltage, VCE [v]
Collector Current, IC [A]
150
4.0V 3.5V
6
5
100
3.0V
4 100A
VGE = 2.5V 50
3
IC = 70A
0 0 2 4 6 8
2 -50 0 50 100 150
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC []
Fig 1. Typical Output Characteristics
Fig 2. Saturation Voltage vs. Case Temperature at Variant Current Level
20
Common Emitter TC = -40
20
Common Emitter TC = 25
Collector-Emitter Voltage, VCE [V]
16
12
Gate-Emitter Voltage, VGE [V]
16
12
8 150A 4 100A IC = 70A 0 0 1 2 3 4 5 6
8 150A 4 100A IC = 70A 0 0 1 2 3 4 5 6
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 3. Saturation Voltage vs. VGE
Fig 4. Saturation Voltage vs. VGE
20 Common Emitter T C = 125
10000 Cies
Collector-Emitter Voltage, VCE [V]
16 1000 Common Emitter VGE = 0V, f = 1MHz TC = 25
12
8
150A 100A
Capacitance [pF]
100
Coes
4 IC = 70A 0 0 1 2 3 4 5 6 10 0 10
Cres
20
30
40
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2001 Fairchild Semiconductor Corporation
Fig 6. Capacitance Characteristics
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
6 Common Emitter VCC = 300V, RL = 2 TC = 25
200 175
Gate - Emitter Voltage, VGE [V]
Collector Peak Current, ICP [A]
150 125 100 75 50 25
4
2
0 0 10 20 30 40 50 60
0 0 2 4 6 8 10
Gate-Charge, Qg [nC]
Gate - Emitter Voltage, VGE [V]
Fig 7. Turn-On Characteristics vs. Gate Resistance
Fig 8. Collector Current Limit vs. Gate - Emitter Voltage Limit
(c)2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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